? by semikron 000621 1 skiip 82 anb 15 t1 absolute maximum ratings symbol conditions 1) values units bridge rectifier v rrm i d i fsm i2t t heatsink = 80 c t p = 10 ms; sin. 180 , t j = 25 c t p = 10 ms; sin. 180 , t j = 25 c 1500 100 3) 1000 5000 v a a a2s igbt chopper v ces v ges i c i cm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 1200 20 58 / 40 116 / 80 v v a a freewheeling diode 2) v rrm i f i fm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 1200 38 / 26 76 / 52 v a a t j t stg v isol diode & igbt ac, 1 min. ? 40 ... + 150 ? 40 ... + 125 2500 c c v characteristics symbol conditions 1) min. typ. max. units diode - rectifier v f v to r t r thjh i f = 75 a t j = 125 c t j = 125 c t j = 125 c per diode ? ? ? ? 1,15 0,8 4,5 ? ? ? ? 1,0 v v m ? k/w igbt - chopper v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 50 a t j = 25 (125) c v cc = 600 v; v ge = 15 v i c = 50 a; t j = 125 c r gon = r goff = 22 ? inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt ? ? ? ? ? ? ? ? 2,5(3,1) 44 56 380 70 13 3,3 ? 3,0(3,7) ? ? ? ? ? ? 0,5 v ns ns ns ns mj nf k/w diode 2) - chopper v f v to r t i rrm q rr e off r thjh i f = 25 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 25 a; v r = ? 600 v di f /dt = ? 500 a/ s v ge = 0 v, t j = 125 c per diode ? ? ? ? ? ? ? 2,0(1,8) 1,0 32 25 4,5 1,0 ? 2,5(2,3) 1,2 44 ? ? ? 1,2 v v m ? a c mj k/w temperature sensor r ts t = 25 / 100 c 1000 / 1670 ? mechanical data m 1 case mounting torque mechanical outline see pages b 16 ?13 and b 16 ? 14 2,5 ? m8a 3,5 nm miniskiip 8 semikron integrated intelligent power skiip 82 anb 15 t1 3-phase bridge rectifier + igbt braking chopper case m8a ul recognized file no. e63532 specification of temperature sensor see part a of data book 99 common characteristics see page b 16 ? 4 of data book 99 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast recovery) 3) limited by spring contact
2 000621 ? by semikron fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) fig. 1 typ. output characteristic, t p = 80 s; 25 c fig. 2 typ. output characteristic, t p = 80 s; 125 c fig. 5 typ. gate charge characteristic fig. 6 typ. capacitances vs. v ce t j = 125 c v cc = 600 v v ge = 15 v i c = 50 a t j = 125 c v cc = 600 v v ge = 15 v r g = 22 ? v ge = 0 v f = 1 mhz i cpuls = 50 a 2 8 1 12 1 1 18 2 123 v 8v v ge v 32na1205 g nc 2 8 1 123 5 17v 13v 15v 11v 9v 7v i c a v ce v 32na1201.vpo 1 1 1 1 0 10203040 ciss coss crss cn 32na1206 v ce v
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